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BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 -- 2 June 2008 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating
1.3 Applications
Air bag Automotive transmission control Fuel pump and injection Automotive ABS systems Diesel injection systems Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot QGD Quick reference Parameter drain-source voltage drain current total power dissipation gate-drain charge Conditions Tj 25 C; Tj 175 C VGS = 5 V; Tmb = 25 C; see Figure 4 and 1 Tmb = 25 C; see Figure 2 VGS = 5 V; ID = 10 A; VDS = 32 V; see Figure 14 VGS = 5 V; ID = 20 A; Tj = 25 C; see Figure 12 and 13 ID = 56 A; Vsup 40 V; RGS = 50 ; VGS = 5 V; Tj(init) = 25 C; unclamped Min Typ 9 Max 40 56 85 Unit V A W nC
Dynamic characteristics
Static characteristics RDSon drain-source on-state resistance 12 14 m
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 89 mJ
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1, 2, 3 4 mb Pinning Symbol S G D Description source gate mounting base; connected to drain
1234
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
SOT669 (LFPAK)
3. Ordering information
Table 3. Ordering information Package Name BUK9Y14-40B LFPAK Description plastic single-ended surface-mounted package (LFPAK); 4 leads Version SOT669 Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature ID = 56 A; Vsup 40 V; RGS = 50 ; VGS = 5 V; Tj(init) = 25 C; unclamped see Figure 3
[1][2] [3]
Conditions Tj 25 C; Tj 175 C Tmb = 25 C; VGS = 5 V; see Figure 4 and 1 Tmb = 100 C; VGS = 5 V; see Figure 1 Tmb = 25 C; tp 10 s; pulsed; see Figure 4 Tmb = 25 C; see Figure 2
Min 15 -55 -55 -
Max 40 15 56 40 226 85 175 175 89
Unit V V A A A W C C mJ
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Source-drain diode IS ISM
[1] [2] [3]
-
-
J
source current peak source current
Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C
-
56 226
A A
Single-pulse avalanche rating limited by maximum junction temperature of 175 C. Repetitive avalanche rating limited by average junction temperature of 170 C. Refer to application note AN10273 for further information.
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
2 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
60 ID (A) 40
003aab217
120 Pder (%) 80
03na19
20
40
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C)
P tot P tot (25C )
200
VGS
5V
P der =
x 100 %
Fig 1. Continuous drain current as a function of mounting base temperature
102 IAL (A) 10
Fig 2. Normalized total power dissipation as a function of mounting base temperature
003aab220
(1)
(2)
(3)
1
10-1 10-3
10-2
10-1
1 t (ms) 10 AL
(1) Single pulse;T j = 25 C. (2) Single pulse;T j = 150 C. (3) Repetitive.
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
3 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
103 ID (A) 102 Limit RDSon = VDS / ID
003aab218
tp = 10 s 100 s
10 DC 1 1 ms 10 ms 100 ms
10-1 1 10 VDS (V)
102
Tmb = 25 C; IDM is single pulse
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 5 Min Typ Max 1.8 Unit K/W
10 Zth (j-mb) (K/W) 1
03nm01
= 0.5 0.2 0.1
10-1
P
=
0.05 0.02
tp
tp T
t T
10-2 10-6
single shot 10-5 10-4 10-3 10-2 10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
4 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Symbol V(BR)DSS Characteristics Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V; Tj = 25 C ID = 250 A; VGS = 0 V; Tj = -55 C VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; voltage Tj = -55 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 11 and 10 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10 IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 175 C VDS = 40 V; VGS = 0 V; Tj = 25 C IGSS gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 C VDS = 0 V; VGS = -20 V; Tj = 25 C RDSon drain-source on-state resistance VGS = 5 V; ID = 20 A; Tj = 175 C; see Figure 12 VGS = 4.5 V; ID = 20 A; Tj = 25 C VGS = 10 V; ID = 20 A; Tj = 25 C VGS = 5 V; ID = 20 A; Tj = 25 C; see Figure 12 and 13 Source-drain diode VSD trr Qr QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 16 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 15 0.85 50 26 21 3.7 9 1360 274 147 15 34 68 42 1.2 1800 330 200 V ns nC nC nC nC pF pF pF ns ns ns ns Min 40 36 1.1 0.5 Typ 1.5 0.02 2 2 9 12 Max 2.3 2 500 1 100 100 26 16 11 14 Unit V V V V V A A nA nA m m m m
Static characteristics
reverse recovery time IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V recovered charge total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time ID = 10 A; VDS = 32 V; VGS = 5 V; see Figure 14
Dynamic characteristics
VDS = 30 V; RL = 2.5 ; VGS = 5 V; RG(ext) = 10
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
5 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
160 ID (A) 120
003aab413
15 RDSon (m) 12
003aab415
15 6
5
80
4 3.8 3.6 3.4 3.2 3 2.8 2.6 2.4 VGS (V) = 2.2 0 2 4 6 8 10 VDS (V)
9
40
0
6 3 7 11 VGS (V) 15
T j = 25 C
T j = 25 C; ID = 20 A
Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values
50 gfs (S) 45
003aab417
Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values
50 ID (A) 40
003aab416
30 40 20 35 10 Tj = 175 C Tj = 25 C
30 5 10 15 20 25 ID (A) 30
0 0 1 2 3 VGS (V) 4
T j = 25 C;VDS = 25V
VDS = 25V
Fig 8. Forward transconductance as a function of drain current; typical values
Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
6 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
10-1 ID (A) 10-2 min 10-3 typ max
03ng53
2.5 VGS(th) (V) 2.0 max
03ng52
1.5
typ
10-4
1.0
min
10-5
0.5
10-6 0 1 2 VGS (V) 3
0 -60
0
60
120 Tj (C)
180
T j = 25 C;VDS = VGS
ID = 1 m A;VDS = VGS
Fig 10. Sub-threshold drain current as a function of gate-source voltage
2 a
003aab851
Fig 11. Gate-source threshold voltage as a function of junction temperature
30 RDSon (m) VGS (V) = 3 3.4 3.8 4
003aab414
5
1.5 20
1
10 15 10
0.5
0 -60
0
60
120 Tj (C)
180
0 0 30 60 90 120 ID (A) 150
a=
R DSon R DSon (25C )
T j = 25 C
Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function of drain current; typical values
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
7 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
5 VGS (V) 4 VDS = 14 V 3
003aab412
2500 C (pF) 2000 Ciss 1500
003aab410
VDS = 32 V 2
1000
Coss
1
500
Crss
0 0 5 10 15 20 25 QG (nC)
0 10-1
1
10 VDS (V)
102
T j = 25 C; ID = 10 A
VGS = 0V ; f = 1 M H z
Fig 14. Gate-source voltage as a function of gate charge; typical values
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
003aab411
50 IS (A) 40
30
20 Tj = 175 C Tj = 25 C 10
0 0.0
0.2
0.4
0.6
0.8 1.0 VSD (V)
VGS = 0V
Fig 16. Source current as a function of source-drain voltage; typical values
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
8 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
E b2 L1
A c2
A2
C E1 b3
mounting base D1 H D
b4
L2
1
e
2
3
b
1/2
4
wM A c X
e
A A1 C
(A 3)
detail X L yC 0 2.5 scale 5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 b3 2.2 2.0 b4 0.9 0.7 c c2 D (1) D1(1) E(1) E1(1) max 5.0 4.8 3.3 3.1 e 1.27 H 6.2 5.8 L 0.85 0.40 L1 1.3 0.8 L2 1.3 0.8 w 0.25 y 0.1 8 0
1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62
0.25 0.30 4.10 4.20 0.19 0.24 3.80
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC MO-235 JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16
Fig 17. Package outline SOT669 (LFPAK)
BUK9Y14-40B_3 (c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
9 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
8. Revision history
Table 7. Revision history Release date 20080602 Data sheet status Product data sheet Product data sheet Product data sheet Change notice Supersedes BUK9Y14-40B_2 BUK9Y14-40B_1 Document ID BUK9Y14-40B_3 Modifications: BUK9Y14-40B_2 BUK9Y14-40B_1
*
Table 4 VDS temperature operating range corrected
20080523 20070903
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
10 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BUK9Y14-40B_3
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 -- 2 June 2008
11 of 12
NXP Semiconductors
BUK9Y14-40B
N-channel TrenchMOS logic level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 June 2008 Document identifier: BUK9Y14-40B_3

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